BARRETTE MEMOIRE BUREAU 2G DDR2

Product Overview

• 240-pin, unbuffered dual in-line memory module (UDIMM)
• Utilizes 400 MT/s, 533 MT/s, 667 MT/s and 800 MT/s DDR2 SDRAM components
• 128MB (16 Meg x 64), 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB (128 Meg x 64), 1GB (256 Meg x64)
• VDD = VDDQ = +1.8V ±0.1V
• VDDSPD = +1.7V to +3.6V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1 tCK

Features

• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial Presence Detect (SPD) with EEPROM
• 6-layers PCB, controlled impedance 60ohm
• Gold edge contacts
• Single rank / Dual rank
• Lead Free product (RoHS compliant)